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SI5504DC - Complementary 30-V (D-S) Rated MOSFET From old datasheet system Complementary 30-V (D-S) MOSFET

SI5504DC_359499.PDF Datasheet


 Full text search : Complementary 30-V (D-S) Rated MOSFET From old datasheet system Complementary 30-V (D-S) MOSFET


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B82500-C-A8 B82500 B82500-C-A10 B82500-C-A2 B82500 VHF chokes with ferrite core Rated voltage 250 V dc/ac Rated current 0,2 to 2 A Rated inductance 120 to 3900 mH
EPCOS[EPCOS]
B84113-C-L60 B84113-C-A110 B84113-C-A30 B84113-C-A SIFI-C for very high insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 3 A to 10 A
EPCOS[EPCOS]
B82476-A1684-M B82476-A1103-M B82476-A1104-M B8247 INDUCTOR 100UH 1200MA
Rated inductance 10 to 1000 mH Rated current 300 to 3800 mA
EPCOS[EPCOS]
B82432-T Size 1812 (EIA) or 4532 (IEC) Rated inductance 1,0 to 1000 mH Rated current 60 to 1300 mA
EPCOS[EPCOS]
B821411102K000 B821411103K000 B821411104J000 B8214 SBC choke (Small Bobbin Core) Rated current 55 to 725 mA Rated inductance 1 to 1000
EPCOS[EPCOS]
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SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
SIEMENS[Siemens Semiconductor Group]
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International Rectifier
B82422-T3820-_ B82422-T1102-_ B82422-T1103-_ B8242 INDUCTOR 1210T 270UH
Size 1210 (EIA) or 3225 (IEC) Rated inductance 0,010 to 330 mH Rated current 40 to 450 mA
EPCOS[EPCOS]
EPCOS AG
B82422-H1683-K100 B82422-H1102-K100 B82422-H1103-K High-current version Size 1210 (EIA) or 3225 (IEC) Rated inductance 1 to 100 mH Rated current 90 to 650 mA
EPCOS AG
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B84103-S1-A60 B84103-S1-A10 B84103-S1-A30 Low Power Pulse Width Modulator 14-PDIP -40 to 85
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EPCOS AG
B82498-B3569-M B82498-B3279-M B82498-B3689-K Size 0805 (EIA) and/or 2012 (IEC) Rated inductance 2,7 to 4700 nH Rated current 90 to 1000 mA 尺寸0805(EIA)和/012年(IEC)的额定电感2,7700 nH的额定电0一○○○毫
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